IXTA1N200P3HV Pagpepresyo (USD) [14212pcs Stock]
- 1 pcs$9.08068
- 10 pcs$8.25601
- 100 pcs$6.67528
- Bilang ng Bahagi:
- IXTA1N200P3HV
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 2000V 1A TO-263HV.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTA1N200P3HV electronic components. IXTA1N200P3HV can be shipped within 24 hours after order. If you have any demands for IXTA1N200P3HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA1N200P3HV Mga katangian ng produkto
Bilang ng Bahagi :
IXTA1N200P3HV
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 2000V 1A TO-263HV
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
2000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
646pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (IXTA)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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