IXYS-RF - IXFH12N50F

KEY Part #: K6397529

IXFH12N50F Pagpepresyo (USD) [10590pcs Stock]

  • 1 pcs$5.15178
  • 10 pcs$4.63572
  • 100 pcs$3.81153
  • 500 pcs$3.19343

Bilang ng Bahagi:
IXFH12N50F
Tagagawa:
IXYS-RF
Detalyadong Paglalarawan:
MOSFET N-CH 500V 12A TO247.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - JFET and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in IXYS-RF IXFH12N50F electronic components. IXFH12N50F can be shipped within 24 hours after order. If you have any demands for IXFH12N50F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH12N50F Mga katangian ng produkto

Bilang ng Bahagi : IXFH12N50F
Tagagawa : IXYS-RF
Paglalarawan : MOSFET N-CH 500V 12A TO247
Serye : HiPerRF™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 400 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1870pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 180W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-247 (IXFH)
Pakete / Kaso : TO-247-3

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