TPH3208LSG Pagpepresyo (USD) [8238pcs Stock]
- 1 pcs$5.00194
- Bilang ng Bahagi:
- TPH3208LSG
- Tagagawa:
- Transphorm
- Detalyadong Paglalarawan:
- GANFET N-CH 650V 20A 3PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Mga module ng Power driver, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - Mga TRIAC and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Transphorm TPH3208LSG electronic components. TPH3208LSG can be shipped within 24 hours after order. If you have any demands for TPH3208LSG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH3208LSG Mga katangian ng produkto
Bilang ng Bahagi :
TPH3208LSG
Tagagawa :
Transphorm
Paglalarawan :
GANFET N-CH 650V 20A 3PQFN
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 14A, 8V
Vgs (th) (Max) @ Id :
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 8V
Vgs (Max) :
±18V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
96W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
3-PQFN (8x8)
Pakete / Kaso :
3-PowerDFN
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