TPN14006NH,L1Q Pagpepresyo (USD) [290438pcs Stock]
- 1 pcs$0.13576
- 5,000 pcs$0.13508
- Bilang ng Bahagi:
- TPN14006NH,L1Q
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 60V 13A 8TSON-ADV.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPN14006NH,L1Q electronic components. TPN14006NH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN14006NH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN14006NH,L1Q Mga katangian ng produkto
Bilang ng Bahagi :
TPN14006NH,L1Q
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 60V 13A 8TSON-ADV
Serye :
U-MOSVIII-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
700mW (Ta), 30W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-TSON Advance (3.3x3.3)
Pakete / Kaso :
8-PowerVDFN
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