CSD86336Q3D Pagpepresyo (USD) [127481pcs Stock]
- 1 pcs$0.29014
- Bilang ng Bahagi:
- CSD86336Q3D
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- 25V POWERBLOCK N CH MOSFET.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Thyristors - SCR - Mga Module and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD86336Q3D electronic components. CSD86336Q3D can be shipped within 24 hours after order. If you have any demands for CSD86336Q3D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD86336Q3D Mga katangian ng produkto
Bilang ng Bahagi :
CSD86336Q3D
Tagagawa :
Texas Instruments
Paglalarawan :
25V POWERBLOCK N CH MOSFET
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Logic Level Gate, 5V Drive
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Ta)
Rds On (Max) @ Id, Vgs :
9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
1.9V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.8nC @ 45V, 7.4nC @ 45V
Input Capacitance (Ciss) (Max) @ Vds :
494pF @ 12.5V, 970pF @ 12.5V
Kapangyarihan - Max :
6W
Temperatura ng pagpapatakbo :
-55°C ~ 125°C
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
8-VSON (3.3x3.3)
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