EPC2010C Pagpepresyo (USD) [25038pcs Stock]
- 1 pcs$1.81967
- 500 pcs$1.81062
- Bilang ng Bahagi:
- EPC2010C
- Tagagawa:
- EPC
- Detalyadong Paglalarawan:
- GANFET TRANS 200V 22A BUMPED DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Transistor - Programmable Unijunction and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in EPC EPC2010C electronic components. EPC2010C can be shipped within 24 hours after order. If you have any demands for EPC2010C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2010C Mga katangian ng produkto
Bilang ng Bahagi :
EPC2010C
Tagagawa :
EPC
Paglalarawan :
GANFET TRANS 200V 22A BUMPED DIE
Serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
22A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 12A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs :
5.3nC @ 5V
Vgs (Max) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die Outline (7-Solder Bar)
Pakete / Kaso :
Die
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