TSM60NB099PW C1G Pagpepresyo (USD) [13321pcs Stock]
- 1 pcs$3.09371
- Bilang ng Bahagi:
- TSM60NB099PW C1G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 38A TO247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM60NB099PW C1G electronic components. TSM60NB099PW C1G can be shipped within 24 hours after order. If you have any demands for TSM60NB099PW C1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB099PW C1G Mga katangian ng produkto
Bilang ng Bahagi :
TSM60NB099PW C1G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET N-CHANNEL 600V 38A TO247
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
38A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 11.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2587pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
329W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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