Bilang ng Bahagi :
HS8K11TB
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET 2N-CH 30V 7A/11A HSML
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7A, 11A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
500pF @ 15V
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-UDFN Exposed Pad
Package ng Tagabigay ng Device :
HSML3030L10