Toshiba Semiconductor and Storage - SSM3J120TU,LF

KEY Part #: K6416248

SSM3J120TU,LF Pagpepresyo (USD) [666819pcs Stock]

  • 1 pcs$0.06132
  • 3,000 pcs$0.06102

Bilang ng Bahagi:
SSM3J120TU,LF
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET P-CH 20V 4A UFM.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Diode - Zener - Arrays and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage SSM3J120TU,LF electronic components. SSM3J120TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J120TU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J120TU,LF Mga katangian ng produkto

Bilang ng Bahagi : SSM3J120TU,LF
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET P-CH 20V 4A UFM
Serye : U-MOSIV
Katayuan ng Bahagi : Active
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 1.5V, 4V
Rds On (Max) @ Id, Vgs : 38 mOhm @ 3A, 4V
Vgs (th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 22.3nC @ 4V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1484pF @ 10V
Tampok ng FET : -
Power Dissipation (Max) : 500mW (Ta)
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : UFM
Pakete / Kaso : 3-SMD, Flat Leads

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