TSM1NB60CW RPG Pagpepresyo (USD) [494141pcs Stock]
- 1 pcs$0.07485
- Bilang ng Bahagi:
- TSM1NB60CW RPG
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 1A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Transistors - IGBTs - Single, Diode - Zener - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM1NB60CW RPG electronic components. TSM1NB60CW RPG can be shipped within 24 hours after order. If you have any demands for TSM1NB60CW RPG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM1NB60CW RPG Mga katangian ng produkto
Bilang ng Bahagi :
TSM1NB60CW RPG
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET N-CHANNEL 600V 1A SOT223
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
10 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.1nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
138pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
39W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223
Pakete / Kaso :
TO-261-4, TO-261AA
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