DMT10H015LFG-13 Pagpepresyo (USD) [179158pcs Stock]
- 1 pcs$0.20645
- 3,000 pcs$0.18272
- Bilang ng Bahagi:
- DMT10H015LFG-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 10A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - RF, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMT10H015LFG-13 electronic components. DMT10H015LFG-13 can be shipped within 24 hours after order. If you have any demands for DMT10H015LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H015LFG-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMT10H015LFG-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 100V 10A
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta), 42A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1871pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta), 35W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerDI3333-8
Pakete / Kaso :
8-PowerWDFN
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