IRFHS8342TRPBF Pagpepresyo (USD) [535141pcs Stock]
- 1 pcs$0.06912
- 4,000 pcs$0.06635
- Bilang ng Bahagi:
- IRFHS8342TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 8.8A PQFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Diode - RF and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFHS8342TRPBF electronic components. IRFHS8342TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHS8342TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHS8342TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFHS8342TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 8.8A PQFN
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.8A (Ta), 19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
8.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TSDSON-6
Pakete / Kaso :
6-PowerVDFN
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