SIS427EDN-T1-GE3 Pagpepresyo (USD) [306526pcs Stock]
- 1 pcs$0.12067
- 3,000 pcs$0.11355
- Bilang ng Bahagi:
- SIS427EDN-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 50A 1212-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIS427EDN-T1-GE3 electronic components. SIS427EDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS427EDN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS427EDN-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIS427EDN-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 30V 50A 1212-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
50A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.6 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1930pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
3.7W (Ta), 52W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® 1212-8
Pakete / Kaso :
PowerPAK® 1212-8
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