IXT-1-1N100S1 Pagpepresyo (USD) [8510pcs Stock]
- 1 pcs$5.59712
- 94 pcs$5.56928
- Bilang ng Bahagi:
- IXT-1-1N100S1
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1000V 1.5A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Diode - Mga Rectifier ng Bridge and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXT-1-1N100S1 electronic components. IXT-1-1N100S1 can be shipped within 24 hours after order. If you have any demands for IXT-1-1N100S1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXT-1-1N100S1 Mga katangian ng produkto
Bilang ng Bahagi :
IXT-1-1N100S1
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1000V 1.5A 8-SOIC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1000V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
-
Package ng Tagabigay ng Device :
-
Pakete / Kaso :
-
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