IXFX30N110P Pagpepresyo (USD) [3957pcs Stock]
- 1 pcs$12.65297
- 30 pcs$12.59002
- Bilang ng Bahagi:
- IXFX30N110P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1100V 30A PLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Mga module ng Power driver, Diode - Rectifiers - Single, Thyristors - Mga SCR, Thyristors - SCR - Mga Module and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFX30N110P electronic components. IXFX30N110P can be shipped within 24 hours after order. If you have any demands for IXFX30N110P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX30N110P Mga katangian ng produkto
Bilang ng Bahagi :
IXFX30N110P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1100V 30A PLUS247
Serye :
HiPerFET™, PolarP2™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
13600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
960W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS247™-3
Pakete / Kaso :
TO-247-3
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