Vishay Semiconductor Diodes Division - 1N5417-TAP

KEY Part #: K6440186

1N5417-TAP Pagpepresyo (USD) [267202pcs Stock]

  • 1 pcs$0.13912
  • 12,500 pcs$0.13842

Bilang ng Bahagi:
1N5417-TAP
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE AVALANCHE 200V 3A SOD64. Rectifiers 3.0 Amp 200 Volt
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs and Mga Transistor - JFET ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division 1N5417-TAP electronic components. 1N5417-TAP can be shipped within 24 hours after order. If you have any demands for 1N5417-TAP, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5417-TAP Mga katangian ng produkto

Bilang ng Bahagi : 1N5417-TAP
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE AVALANCHE 200V 3A SOD64
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Avalanche
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.5V @ 9A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 100ns
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : SOD-64, Axial
Package ng Tagabigay ng Device : SOD-64
Operating temperatura - Junction : -55°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • IDB30E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A

  • IDB30E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 52.3A TO263.

  • SE10FDHM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 1A DO219AB. Rectifiers 1A 200V ESD Prot SMF Rectifier

  • SE10FG-M3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO219AB. Rectifiers 1A 400V ESD Prot SMF Rectifier

  • SE10FGHM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 1A DO219AB. Rectifiers 1A 400V ESD Prot SMF Rectifier

  • SE10FJHM3/H

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V SMF Rectifier