Infineon Technologies - IDB30E60ATMA1

KEY Part #: K6440285

IDB30E60ATMA1 Pagpepresyo (USD) [68077pcs Stock]

  • 1 pcs$0.57436
  • 1,000 pcs$0.39206

Bilang ng Bahagi:
IDB30E60ATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 52.3A TO263.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Programmable Unijunction, Diode - Mga Rectifier ng Bridge, Transistor - IGBTs - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Diode - Zener - Single and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IDB30E60ATMA1 electronic components. IDB30E60ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E60ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDB30E60ATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IDB30E60ATMA1
Tagagawa : Infineon Technologies
Paglalarawan : DIODE GEN PURP 600V 52.3A TO263
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 52.3A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 2V @ 30A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 126ns
Kasalukuyang - Reverse Leakage @ Vr : 50µA @ 600V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : PG-TO263-3-2
Operating temperatura - Junction : -40°C ~ 175°C

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