Vishay Semiconductor Diodes Division - S5GHE3/9AT

KEY Part #: K6444090

[2568pcs Stock]


    Bilang ng Bahagi:
    S5GHE3/9AT
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 400V 5A DO214AB.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division S5GHE3/9AT electronic components. S5GHE3/9AT can be shipped within 24 hours after order. If you have any demands for S5GHE3/9AT, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    S5GHE3/9AT Mga katangian ng produkto

    Bilang ng Bahagi : S5GHE3/9AT
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 400V 5A DO214AB
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 400V
    Kasalukuyang - Average na Rectified (Io) : 5A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 5A
    Bilis : Standard Recovery >500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 2.5µs
    Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 400V
    Capacitance @ Vr, F : 40pF @ 4V, 1MHz
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : DO-214AB, SMC
    Package ng Tagabigay ng Device : DO-214AB (SMC)
    Operating temperatura - Junction : -55°C ~ 150°C

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