FQU13N06LTU-WS Pagpepresyo (USD) [85018pcs Stock]
- 1 pcs$0.45991
- Bilang ng Bahagi:
- FQU13N06LTU-WS
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 11A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Diode - Zener - Single, Mga module ng Power driver and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQU13N06LTU-WS electronic components. FQU13N06LTU-WS can be shipped within 24 hours after order. If you have any demands for FQU13N06LTU-WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU13N06LTU-WS Mga katangian ng produkto
Bilang ng Bahagi :
FQU13N06LTU-WS
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 11A IPAK
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
115 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.4nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 28W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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