[13421pcs Stock]
- Bilang ng Bahagi:
- 2N6661JTXP02
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 90V 0.86A TO-205.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Thyristors - Mga TRIAC, Mga Transistor - JFET, Diode - Zener - Arrays, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Arrays and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix 2N6661JTXP02 electronic components. 2N6661JTXP02 can be shipped within 24 hours after order. If you have any demands for 2N6661JTXP02, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N6661JTXP02 Mga katangian ng produkto
Bilang ng Bahagi :
2N6661JTXP02
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 90V 0.86A TO-205
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
90V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
860mA (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
725mW (Ta), 6.25W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-39
Pakete / Kaso :
TO-205AD, TO-39-3 Metal Can
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