IXTP10N60P Pagpepresyo (USD) [38966pcs Stock]
- 1 pcs$1.22241
- 50 pcs$1.21633
- Bilang ng Bahagi:
- IXTP10N60P
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 10A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga module ng Power driver, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Diode - Zener - Arrays, Diode - RF and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTP10N60P electronic components. IXTP10N60P can be shipped within 24 hours after order. If you have any demands for IXTP10N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP10N60P Mga katangian ng produkto
Bilang ng Bahagi :
IXTP10N60P
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 10A TO-220
Serye :
Polar™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
740 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
200W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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