IXTA160N10T Pagpepresyo (USD) [33250pcs Stock]
- 1 pcs$1.37025
- 50 pcs$1.36344
- Bilang ng Bahagi:
- IXTA160N10T
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 160A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTA160N10T electronic components. IXTA160N10T can be shipped within 24 hours after order. If you have any demands for IXTA160N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA160N10T Mga katangian ng produkto
Bilang ng Bahagi :
IXTA160N10T
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 100V 160A TO-263
Serye :
TrenchMV™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
160A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
132nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
430W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (IXTA)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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