ZVN4210GTA Pagpepresyo (USD) [209924pcs Stock]
- 1 pcs$0.17708
- 1,000 pcs$0.17620
- Bilang ng Bahagi:
- ZVN4210GTA
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 800MA SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Diode - Rectifiers - Single, Mga Transistor - JFET, Thyristors - Mga SCR, Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated ZVN4210GTA electronic components. ZVN4210GTA can be shipped within 24 hours after order. If you have any demands for ZVN4210GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZVN4210GTA Mga katangian ng produkto
Bilang ng Bahagi :
ZVN4210GTA
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 100V 800MA SOT223
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
800mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-223
Pakete / Kaso :
TO-261-4, TO-261AA
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