SI8900EDB-T2-E1 Pagpepresyo (USD) [54394pcs Stock]
- 1 pcs$0.71884
- 3,000 pcs$0.67285
- Bilang ng Bahagi:
- SI8900EDB-T2-E1
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 20V 5.4A 10-MFP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Espesyal na Pakay and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI8900EDB-T2-E1 electronic components. SI8900EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8900EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8900EDB-T2-E1 Mga katangian ng produkto
Bilang ng Bahagi :
SI8900EDB-T2-E1
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 20V 5.4A 10-MFP
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Drain
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.4A
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
10-UFBGA, CSPBGA
Package ng Tagabigay ng Device :
10-Micro Foot™ CSP (2x5)
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