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  4. Transistor - Mga FET, MOSFET - Single
  5. FDS3512

ON Semiconductor - FDS3512

KEY Part #: K6392822

FDS3512 Pagpepresyo (USD) [93051pcs Stock]

  • 1 pcs$0.42231
  • 2,500 pcs$0.42021
Bilang ng Bahagi:
FDS3512
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 80V 4A 8SOIC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - IGBTs - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FDS3512 electronic components. FDS3512 can be shipped within 24 hours after order. If you have any demands for FDS3512, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS3512 Mga katangian ng produkto

Bilang ng Bahagi : FDS3512
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 80V 4A 8SOIC
Serye : PowerTrench®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 70 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 634pF @ 40V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : 8-SOIC
Pakete / Kaso : 8-SOIC (0.154", 3.90mm Width)

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