FDS4435BZ Pagpepresyo (USD) [348166pcs Stock]
- 1 pcs$0.10624
- 2,500 pcs$0.10238
- Bilang ng Bahagi:
- FDS4435BZ
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 8.8A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Single, Diode - RF, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Mga Rectifier ng Bridge and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDS4435BZ electronic components. FDS4435BZ can be shipped within 24 hours after order. If you have any demands for FDS4435BZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDS4435BZ Mga katangian ng produkto
Bilang ng Bahagi :
FDS4435BZ
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET P-CH 30V 8.8A 8-SOIC
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 8.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1845pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SOIC
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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