SI1926DL-T1-GE3 Pagpepresyo (USD) [575693pcs Stock]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Bilang ng Bahagi:
- SI1926DL-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 0.37A SOT363.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI1926DL-T1-GE3 electronic components. SI1926DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1926DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1926DL-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI1926DL-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 60V 0.37A SOT363
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
370mA
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
18.5pF @ 30V
Kapangyarihan - Max :
510mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SC-70-6 (SOT-363)
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