[8865pcs Stock]
- Bilang ng Bahagi:
- PHD21N06LT,118
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V 19A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Transistor - Programmable Unijunction and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PHD21N06LT,118 electronic components. PHD21N06LT,118 can be shipped within 24 hours after order. If you have any demands for PHD21N06LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD21N06LT,118 Mga katangian ng produkto
Bilang ng Bahagi :
PHD21N06LT,118
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 55V 19A DPAK
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
19A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
9.4nC @ 5V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
56W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
DPAK
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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