NSVMUN5133DW1T1G Pagpepresyo (USD) [924855pcs Stock]
- 1 pcs$0.03999
- 6,000 pcs$0.03777
- Bilang ng Bahagi:
- NSVMUN5133DW1T1G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- TRANS 2PNP BRT BIPO SOT363-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Mga Module, Mga Transistor - JFET, Thyristors - Mga TRIAC, Diode - RF, Transistor - Mga FET, MOSFET - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NSVMUN5133DW1T1G electronic components. NSVMUN5133DW1T1G can be shipped within 24 hours after order. If you have any demands for NSVMUN5133DW1T1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSVMUN5133DW1T1G Mga katangian ng produkto
Bilang ng Bahagi :
NSVMUN5133DW1T1G
Tagagawa :
ON Semiconductor
Paglalarawan :
TRANS 2PNP BRT BIPO SOT363-6
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 PNP - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
-
Kapangyarihan - Max :
250mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SC-88/SC70-6/SOT-363
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