BCR129E6327HTSA1 Pagpepresyo (USD) [3612259pcs Stock]
- 1 pcs$0.01415
- 3,000 pcs$0.01408
- Bilang ng Bahagi:
- BCR129E6327HTSA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- TRANS PREBIAS NPN 200MW SOT23-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Mga Module, Thyristors - SCR - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BCR129E6327HTSA1 electronic components. BCR129E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR129E6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BCR129E6327HTSA1 Mga katangian ng produkto
Bilang ng Bahagi :
BCR129E6327HTSA1
Tagagawa :
Infineon Technologies
Paglalarawan :
TRANS PREBIAS NPN 200MW SOT23-3
Serye :
-
Katayuan ng Bahagi :
Last Time Buy
Uri ng Transistor :
NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
-
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
Dalas - Paglilipat :
150MHz
Kapangyarihan - Max :
200mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23-3
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