BSZ15DC02KDHXTMA1 Pagpepresyo (USD) [213080pcs Stock]
- 1 pcs$0.17445
- 5,000 pcs$0.17358
- Bilang ng Bahagi:
- BSZ15DC02KDHXTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 20V 8TDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Thyristors - Mga TRIAC, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSZ15DC02KDHXTMA1 electronic components. BSZ15DC02KDHXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ15DC02KDHXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ15DC02KDHXTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSZ15DC02KDHXTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N/P-CH 20V 8TDSON
Serye :
Automotive, AEC-Q101, HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel Complementary
Tampok ng FET :
Logic Level Gate, 2.5V Drive
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.1A, 3.2A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs :
2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
419pF @ 10V
Kapangyarihan - Max :
2.5W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
PG-TSDSON-8-FL
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