FCMT199N60 Pagpepresyo (USD) [49718pcs Stock]
- 1 pcs$0.78644
- 3,000 pcs$0.62557
- Bilang ng Bahagi:
- FCMT199N60
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 20.2A POWER88.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Transistor - Espesyal na Pakay, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Transistor - IGBTs - Mga Module, Thyristors - DIACs, SIDACs and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FCMT199N60 electronic components. FCMT199N60 can be shipped within 24 hours after order. If you have any demands for FCMT199N60, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCMT199N60 Mga katangian ng produkto
Bilang ng Bahagi :
FCMT199N60
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 600V 20.2A POWER88
Serye :
SuperFET® II
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
199 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2950pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
208W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Power88
Pakete / Kaso :
4-PowerTSFN
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