[330pcs Stock]
- Bilang ng Bahagi:
- SPD04N80C3BTMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 4A TO-252.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single, Mga module ng Power driver, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SPD04N80C3BTMA1 electronic components. SPD04N80C3BTMA1 can be shipped within 24 hours after order. If you have any demands for SPD04N80C3BTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPD04N80C3BTMA1 Mga katangian ng produkto
Bilang ng Bahagi :
SPD04N80C3BTMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 800V 4A TO-252
Serye :
CoolMOS™
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
63W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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