[1989pcs Stock]
- Bilang ng Bahagi:
- IRFH7110TR2PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N CH 100V 11A PQFN5X6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Diode - RF, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFH7110TR2PBF electronic components. IRFH7110TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7110TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7110TR2PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFH7110TR2PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N CH 100V 11A PQFN5X6
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Ta), 58A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.5 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3240pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.6W (Ta), 104W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-PQFN (5x6)
Pakete / Kaso :
8-TQFN Exposed Pad
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