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  5. CDBDSC10650-G

Comchip Technology - CDBDSC10650-G

KEY Part #: K6441607

CDBDSC10650-G Pagpepresyo (USD) [19897pcs Stock]

  • 1 pcs$2.07129
Bilang ng Bahagi:
CDBDSC10650-G
Tagagawa:
Comchip Technology
Detalyadong Paglalarawan:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 650V
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Mga Transistor - JFET, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Comchip Technology CDBDSC10650-G electronic components. CDBDSC10650-G can be shipped within 24 hours after order. If you have any demands for CDBDSC10650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBDSC10650-G Mga katangian ng produkto

Bilang ng Bahagi : CDBDSC10650-G
Tagagawa : Comchip Technology
Paglalarawan : DIODE SILICON CARBIDE POWER SCHO
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 650V
Kasalukuyang - Average na Rectified (Io) : 33A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 10A
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 650V
Capacitance @ Vr, F : 690pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device : D-PAK (TO-252)
Operating temperatura - Junction : -55°C ~ 175°C

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