SISC29N20DX1SA1 Pagpepresyo (USD) [182876pcs Stock]
- 1 pcs$0.20327
- 23,760 pcs$0.20225
- Bilang ng Bahagi:
- SISC29N20DX1SA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- TRANSISTOR P-CH BARE DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SISC29N20DX1SA1 electronic components. SISC29N20DX1SA1 can be shipped within 24 hours after order. If you have any demands for SISC29N20DX1SA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISC29N20DX1SA1 Mga katangian ng produkto
Bilang ng Bahagi :
SISC29N20DX1SA1
Tagagawa :
Infineon Technologies
Paglalarawan :
TRANSISTOR P-CH BARE DIE
Serye :
*
Katayuan ng Bahagi :
Active
Uri ng FET :
-
Teknolohiya :
-
Drain sa Source Voltage (Vdss) :
-
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
-
Package ng Tagabigay ng Device :
-
Pakete / Kaso :
-
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