ZXMN10B08E6TA Pagpepresyo (USD) [272776pcs Stock]
- 1 pcs$0.13560
- 3,000 pcs$0.12049
- Bilang ng Bahagi:
- ZXMN10B08E6TA
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 1.6A SOT23-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated ZXMN10B08E6TA electronic components. ZXMN10B08E6TA can be shipped within 24 hours after order. If you have any demands for ZXMN10B08E6TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN10B08E6TA Mga katangian ng produkto
Bilang ng Bahagi :
ZXMN10B08E6TA
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 100V 1.6A SOT23-6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.3V, 10V
Rds On (Max) @ Id, Vgs :
230 mOhm @ 1.6A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
497pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
1.1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-26
Pakete / Kaso :
SOT-23-6
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