TK6A80E,S4X Pagpepresyo (USD) [49481pcs Stock]
- 1 pcs$0.86965
- 50 pcs$0.70249
- 100 pcs$0.63225
- 500 pcs$0.49176
- 1,000 pcs$0.40746
- Bilang ng Bahagi:
- TK6A80E,S4X
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V TO220SIS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Diode - Rectifiers - Single and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK6A80E,S4X electronic components. TK6A80E,S4X can be shipped within 24 hours after order. If you have any demands for TK6A80E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6A80E,S4X Mga katangian ng produkto
Bilang ng Bahagi :
TK6A80E,S4X
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 800V TO220SIS
Serye :
π-MOSVIII
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.7 Ohm @ 3A, 10V
Vgs (th) (Max) @ Id :
4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
45W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220SIS
Pakete / Kaso :
TO-220-3 Full Pack
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