LND01K1-G Pagpepresyo (USD) [281979pcs Stock]
- 1 pcs$0.13439
- 3,000 pcs$0.13372
- Bilang ng Bahagi:
- LND01K1-G
- Tagagawa:
- Microchip Technology
- Detalyadong Paglalarawan:
- MOSFET N-CH 9V 330MA SOT23-5.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga Transistor - JFET, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays and Diode - Rectifiers - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Microchip Technology LND01K1-G electronic components. LND01K1-G can be shipped within 24 hours after order. If you have any demands for LND01K1-G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
LND01K1-G Mga katangian ng produkto
Bilang ng Bahagi :
LND01K1-G
Tagagawa :
Microchip Technology
Paglalarawan :
MOSFET N-CH 9V 330MA SOT23-5
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
9V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
330mA (Tj)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 100mA, 0V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
+0.6V, -12V
Input Capacitance (Ciss) (Max) @ Vds :
46pF @ 5V
Tampok ng FET :
Depletion Mode
Power Dissipation (Max) :
360mW (Ta)
Temperatura ng pagpapatakbo :
-25°C ~ 125°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-5
Pakete / Kaso :
SC-74A, SOT-753
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