BSC0910NDIATMA1 Pagpepresyo (USD) [95992pcs Stock]
- 1 pcs$0.40734
- 5,000 pcs$0.39102
- Bilang ng Bahagi:
- BSC0910NDIATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 25V 16A/31A TISON8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC0910NDIATMA1 electronic components. BSC0910NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSC0910NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC0910NDIATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC0910NDIATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 25V 16A/31A TISON8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Asymmetrical
Tampok ng FET :
Logic Level Gate, 4.5V Drive
Drain sa Source Voltage (Vdss) :
25V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A, 31A
Rds On (Max) @ Id, Vgs :
4.6 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 12V
Kapangyarihan - Max :
1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
PG-TISON-8
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