Taiwan Semiconductor Corporation - RS1DL RVG

KEY Part #: K6455359

RS1DL RVG Pagpepresyo (USD) [1467002pcs Stock]

  • 1 pcs$0.02521

Bilang ng Bahagi:
RS1DL RVG
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 800MA SUBSMA. Rectifiers 150ns 0.8A 200V Fs Recov Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Mga Transistor - Bipolar (BJT) - RF and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation RS1DL RVG electronic components. RS1DL RVG can be shipped within 24 hours after order. If you have any demands for RS1DL RVG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1DL RVG Mga katangian ng produkto

Bilang ng Bahagi : RS1DL RVG
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 200V 800MA SUBSMA
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 800mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.3V @ 800mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 150ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : Sub SMA
Operating temperatura - Junction : -55°C ~ 150°C

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