Vishay Semiconductor Diodes Division - VS-1EFH02HM3/I

KEY Part #: K6455314

VS-1EFH02HM3/I Pagpepresyo (USD) [792956pcs Stock]

  • 1 pcs$0.04665
  • 10,000 pcs$0.04227
  • 30,000 pcs$0.03887

Bilang ng Bahagi:
VS-1EFH02HM3/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - JFET, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Diode - Mga Rectifier ng Bridge and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-1EFH02HM3/I electronic components. VS-1EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-1EFH02HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1EFH02HM3/I Mga katangian ng produkto

Bilang ng Bahagi : VS-1EFH02HM3/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 1A DO219AB
Serye : Automotive, AEC-Q101, FRED Pt®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 930mV @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : DO-219AB (SMF)
Operating temperatura - Junction : -55°C ~ 175°C

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