Vishay Semiconductor Diodes Division - VS-2EFH02HM3/I

KEY Part #: K6455323

VS-2EFH02HM3/I Pagpepresyo (USD) [625017pcs Stock]

  • 1 pcs$0.05918
  • 10,000 pcs$0.05147
  • 30,000 pcs$0.05083

Bilang ng Bahagi:
VS-2EFH02HM3/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 2A DO219AB. Rectifiers Hypfst Rct 2A 200V
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Diode - RF, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-2EFH02HM3/I electronic components. VS-2EFH02HM3/I can be shipped within 24 hours after order. If you have any demands for VS-2EFH02HM3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EFH02HM3/I Mga katangian ng produkto

Bilang ng Bahagi : VS-2EFH02HM3/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 2A DO219AB
Serye : Automotive, AEC-Q101, FRED Pt®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 2µA @ 200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : DO-219AB (SMF)
Operating temperatura - Junction : -65°C ~ 175°C

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