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  1. Bahay
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  4. Diode - Rectifiers - Single
  5. 1N3766

GeneSiC Semiconductor - 1N3766

KEY Part #: K6425635

1N3766 Pagpepresyo (USD) [11842pcs Stock]

  • 1 pcs$3.48004
  • 100 pcs$3.37202
Bilang ng Bahagi:
1N3766
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 800V 35A DO5. Rectifiers 800V 35A Std. Recovery
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor 1N3766 electronic components. 1N3766 can be shipped within 24 hours after order. If you have any demands for 1N3766, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N3766 Mga katangian ng produkto

Bilang ng Bahagi : 1N3766
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE GEN PURP 800V 35A DO5
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 800V
Kasalukuyang - Average na Rectified (Io) : 35A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 35A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Chassis, Stud Mount
Pakete / Kaso : DO-203AB, DO-5, Stud
Package ng Tagabigay ng Device : DO-5
Operating temperatura - Junction : -65°C ~ 190°C
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