FQU1N80TU Pagpepresyo (USD) [219672pcs Stock]
- 1 pcs$0.18056
- 5,040 pcs$0.17966
- Bilang ng Bahagi:
- FQU1N80TU
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 1A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Thyristors - SCR - Mga Module, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQU1N80TU electronic components. FQU1N80TU can be shipped within 24 hours after order. If you have any demands for FQU1N80TU, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQU1N80TU Mga katangian ng produkto
Bilang ng Bahagi :
FQU1N80TU
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 800V 1A IPAK
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
195pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 45W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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