DMN61D9UDW-13 Pagpepresyo (USD) [1084431pcs Stock]
- 1 pcs$0.03411
- 10,000 pcs$0.03063
- Bilang ng Bahagi:
- DMN61D9UDW-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 0.35A SOT363.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Mga module ng Power driver, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN61D9UDW-13 electronic components. DMN61D9UDW-13 can be shipped within 24 hours after order. If you have any demands for DMN61D9UDW-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN61D9UDW-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN61D9UDW-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 60V 0.35A SOT363
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
350mA
Rds On (Max) @ Id, Vgs :
2 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
28.5pF @ 30V
Kapangyarihan - Max :
320mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
6-TSSOP, SC-88, SOT-363
Package ng Tagabigay ng Device :
SOT-363
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