EPC8002 Pagpepresyo (USD) [65490pcs Stock]
- 1 pcs$0.62703
- 2,500 pcs$0.62391
- Bilang ng Bahagi:
- EPC8002
- Tagagawa:
- EPC
- Detalyadong Paglalarawan:
- GANFET TRANS 65V 2.7A BUMPED DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in EPC EPC8002 electronic components. EPC8002 can be shipped within 24 hours after order. If you have any demands for EPC8002, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC8002 Mga katangian ng produkto
Bilang ng Bahagi :
EPC8002
Tagagawa :
EPC
Paglalarawan :
GANFET TRANS 65V 2.7A BUMPED DIE
Serye :
eGaN®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
65V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
530 mOhm @ 500mA, 5V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds :
21pF @ 32.5V
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
Die
Pakete / Kaso :
Die
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