Taiwan Semiconductor Corporation - ES1JLHMHG

KEY Part #: K6437468

ES1JLHMHG Pagpepresyo (USD) [1246619pcs Stock]

  • 1 pcs$0.02967

Bilang ng Bahagi:
ES1JLHMHG
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 1A SUB SMA.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Arrays, Mga module ng Power driver and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ES1JLHMHG electronic components. ES1JLHMHG can be shipped within 24 hours after order. If you have any demands for ES1JLHMHG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES1JLHMHG Mga katangian ng produkto

Bilang ng Bahagi : ES1JLHMHG
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 600V 1A SUB SMA
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : Sub SMA
Operating temperatura - Junction : -55°C ~ 150°C

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