DMG4800LSD-13 Pagpepresyo (USD) [409104pcs Stock]
- 1 pcs$0.09041
- 2,500 pcs$0.08092
- Bilang ng Bahagi:
- DMG4800LSD-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 7.5A 8SO.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMG4800LSD-13 electronic components. DMG4800LSD-13 can be shipped within 24 hours after order. If you have any demands for DMG4800LSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4800LSD-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMG4800LSD-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2N-CH 30V 7.5A 8SO
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7.5A
Rds On (Max) @ Id, Vgs :
16 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.56nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
798pF @ 10V
Kapangyarihan - Max :
1.17W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SOP
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