SI7997DP-T1-GE3 Pagpepresyo (USD) [83104pcs Stock]
- 1 pcs$0.47051
- 3,000 pcs$0.44082
- Bilang ng Bahagi:
- SI7997DP-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2P-CH 30V 60A PPAK SO-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Diode - Zener - Single, Transistors - IGBTs - Single and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI7997DP-T1-GE3 electronic components. SI7997DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7997DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7997DP-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI7997DP-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2P-CH 30V 60A PPAK SO-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 P-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6200pF @ 15V
Kapangyarihan - Max :
46W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
PowerPAK® SO-8 Dual
Package ng Tagabigay ng Device :
PowerPAK® SO-8 Dual
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